| PART |
Description |
Maker |
| TZ150N22KOF TZ150N18KOF TZ150N24KOF TZ150N26KOC |
High junction temperature Transil 晶闸管模块|可控硅| 2.2KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 1.8KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 2.4KV五（无线资源管理）| 223A我（翻译
High junction temperature Transil 晶闸管模块|可控硅| 2.6KV五（无线资源管理）| 223A我（翻译
|
Infineon Technologies AG
|
| SSTS20L60CT |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSTS20U60P5 |
High Junction Temperature
|
Silikron Semiconductor ...
|
| SSBR10100CT SSBR10100CTF |
High Junction Temperature
|
Silikron Semiconductor ...
Silikron Semiconductor Co.,LTD.
|
| SSMD3030CT |
High Junction Temperature
|
Silikron Semiconductor ...
|
| TN4015H-6T |
High junction temperature : Tj=150?
|
STMicroelectronics
|
| SMA6F5.0A |
High junction temperature Transil
|
STMicroelectronics
|
| NESG2101M16 NESG2101M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
|
NEC, Corp.
NEC[NEC]
|
| NESG2031M05-T1 NESG2031M05 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
From old datasheet system
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
